Abstract—Now a days, microwave processing of materials is gaining popularity due to its specific characteristic such as rapid heating, volumetric and internal heating, selective heating, reduced processing time and power consumption in contrast to conventional processing of materials. The microwave interaction of materials depends upon the dielectric properties of the materials being processed. Thus for optimum utilization of this technology, the understanding of the phenomenon of propagation of electromagnetic field in the material and how it interacts with material with different dielectric properties is the key aspects. This paper represents the simulation of the materials having different dielectric properties, such as silicon carbide and graphite plate using COMSOL Multiphysics (version 4.3) FEA based simulation software. Simulation result shows that the temperature in the silicon carbide reaches up to 868 °C in 300 s with resistive losses of 1 x 108 W/m3 and temperature in graphite plate reaches up to 486 °C in 300 s with resistive losses of 4 x 107 W/m3 by exposure of microwave radiation at 900 W.

Index Terms—MIcrowave, COMSOL, FEA, Electromagnetic field, Simulation

Cite:Amit Bansal and Apurbba Kumar Sharma, "3D Electromagnetic Field Simulation of Silicon Carbide and Graphite Plate in Microwave Oven ," International Journal of Mechanical Engineering and Robotics Research, Special Issue, Vol. 1, No. 1, pp. 7-12, January 2014.